This PhD thesis will be carried out within the framework of the DIADEM REBORN Project. Hexagonal boron nitride (h-BN) is an emerging two-dimensional (2D) material with highly attractive properties for optoelectronic applications. It is attracting increasing interest for the development of next-generation electronic and optoelectronic devices.
The epitaxial growth of GaN on h-BN offers promising opportunities for the development and large-scale manufacturing of optoelectronic devices. In particular, this approach is compatible with standard industrial reactors and can potentially be integrated into conventional epitaxial processes used for the fabrication of active GaN-based devices.
However, the growth of III-nitride materials on h-BN by metal-organic vapor-phase epitaxy (MOVPE) remains a significant scientific and technological challenge. The complexity of the growth environment and the underlying mechanisms requires a comprehensive understanding of the physical and chemical phenomena involved in order to optimize the structural, optical, and electrical properties of GaN and related heterostructures.
The objective of this PhD project is therefore to contribute to a significant improvement in the quality of GaN-based materials and heterostructures grown epitaxially on h-BN. The project will combine advanced materials characterization techniques with artificial intelligence (AI)-assisted optimization of epitaxial growth parameters. This approach will enable the identification of the most relevant growth parameters and the establishment of correlations between epitaxial conditions and the resulting material and device properties.
PhD Research Activities
Within the framework of the REBORN Project, the PhD student will contribute to the development of the different technological building blocks required for the MOVPE growth of GaN-based heterostructures on h-BN, as well as their integration into optoelectronic devices.
The research activities will include:
- Development and optimization of MOVPE epitaxial growth processes;
- Investigation of the influence of growth parameters on the properties of GaN-based layers and heterostructures;
- Fabrication and optimization of devices based on the developed heterostructures;
- Advanced characterization of materials and devices using techniques including X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), photoluminescence (PL), cathodoluminescence (CL), and electrical measurements;
- Analysis and interpretation of experimental data to establish correlations between growth conditions, material properties, and device performance;
- Development of AI-based approaches for the optimization of epitaxial growth processes;
- Dissemination and valorization of the research results through scientific publications and presentations at international conferences.
This PhD thesis will provide a multidisciplinary research environment at the interface of materials science, semiconductor epitaxy, optoelectronics, advanced characterization, and artificial intelligence, with the aim of developing novel GaN/h-BN technological platforms for next-generation optoelectronic devices.
Additional Information
Additional comments
Working in a bilingual environment, Meticulous work in MOVPE lab and clean rooms.
