"Research Fellow (Gallium Nitride Semiconductor)"

To qualify, candidates must hold a PhD in semiconductors obtained within the last 2 years. Essential GaN device fabrication knowledge and hands-on cleanroom experience with tools like laser writer, RIE/ICP, CVD, E-beam evaporator, and RTA are required. Laboratory measurement skills, especially with Keysight equipment, and UV photodetector knowledge are preferred. Learn more about postdoc opportunities and postdoctoral success tips.

Prior hands-on experience in Gallium Nitride (GaN) device fabrication is mandatory, including proficiency with cleanroom tools such as laser writer, RIE/ICP, CVD, E-beam evaporator, and RTA. This ensures capability in producing high-responsivity deep UV photodetectors. Explore research jobs requiring similar skills.

The role centers on designing and fabricating Gallium Nitride-based photodetectors for deep UV applications, targeting high responsivity for precision sensing. Deliverables include photosensor prototypes and performance KPIs, supported by an MoE grant. Check related research assistant positions for more insights.

Applications are open until May 1, 2026 (Job Requisition ID: 31855). Apply directly via the university portal. Employee referrals are not eligible. Prepare your CV highlighting GaN fabrication experience. Visit free resume templates and research career advice for tips.

The position is at Kent Ridge Campus, within the College of Design and Engineering, Department of Electrical and Computer Engineering at National University of Singapore (NUS). Ideal for those seeking engineering research jobs in a top university. See more faculty and research roles.

Yes, familiarity with laboratory measurements, particularly using Keysight equipment, is preferred for evaluating GaN photodetector performance. Background in photo-sensing properties supports prototype development. Related resources: clinical research jobs with measurement focus.