Singapore's Semiconductor Leap: NTU-Soitec GaN Breakthrough Ushers in Efficient 6G Era
In a landmark announcement timed for the Mobile World Congress (MWC) 2026, Nanyang Technological University (NTU) Singapore and global semiconductor leader Soitec revealed the fruits of their four-year collaboration on Gallium Nitride (GaN) devices tailored for sixth-generation (6G) wireless networks. This partnership has culminated in three seminal technical papers that showcase unprecedented Power Added Efficiency (PAE) levels in GaN High Electron Mobility Transistors (HEMTs), positioning Singapore as a frontrunner in next-gen connectivity research.
GaN, a wide-bandgap semiconductor material prized for its superior electron mobility, high breakdown voltage, and thermal conductivity, is pivotal for high-frequency, high-power applications like 6G base stations and handsets. Unlike traditional silicon or Gallium Arsenide (GaAs), GaN enables devices to operate at higher voltages and temperatures while delivering compact, energy-efficient performance essential for the terabit-per-second speeds and sub-millisecond latency promised by 6G.
The collaboration leverages Soitec's proprietary GaN-on-Silicon epitaxial wafers, produced using the Smart Cut™ process at their Belgium facility. This substrate innovation allows GaN layers to be transferred onto cost-effective, large-scale silicon carriers, bridging the gap between premium GaN-on-SiC (Silicon Carbide) performance and silicon's manufacturability.
Unpacking the Record-Breaking Power Added Efficiency Achievements
At the heart of this breakthrough are record PAE metrics, a critical figure-of-merit for power amplifiers (PAs). PAE measures how effectively a device converts DC power into useful RF output power, calculated as (Pout - Pin) / PDC × 100%. High PAE translates to longer battery life in mobiles and lower operational costs for networks.
NTU researchers demonstrated PAE exceeding 50% across Frequency Range 3 (FR3: 7-24 GHz), a sub-THz band crucial for 6G's expanded spectrum. In mmWave regimes (above 24 GHz), efficiencies surpassed 60%, all at low voltages compatible with handset batteries—typically under 5V. These figures outpace conventional GaAs PAs and rival GaN-on-SiC, but at a fraction of the cost due to silicon scalability.
Step-by-step, the process involved: (1) Epitaxial growth of GaN HEMTs on Soitec's wafers; (2) Device fabrication at NTU's labs; (3) Characterization under real-world 6G conditions, including load-pull measurements for optimal impedance matching; (4) MMIC (Monolithic Microwave Integrated Circuit) integration for practical modules. This yielded prototypes with superior linearity, essential for multi-user MIMO in dense 6G environments.
- FR3 PAE >50% at handset voltages, enabling integrated RF front-ends.
- mmWave PAE >60%, supporting THz backhaul.
- Improved thermal dissipation, reducing cooling needs by up to 30% vs GaAs.
These results were validated through rigorous testing, confirming GaN-on-Silicon's viability for commercial 6G deployment by 2030.
Spotlight on the Three Seminal Technical Papers
The trio of papers, authored by the joint NTU-Soitec team led by figures like Prof. Ng Geok Ing—Executive Director of NTU's National Semiconductor Translation & Innovation Centre for GaN (NSTIC GaN)—detail the engineering feats. While specific titles remain under embargo ahead of conference presentations (likely IEEE MTT-S or EuMW 2026), their findings focus on:
- Low-Voltage PA Optimization: Novel harmonic tuning achieves >50% PAE in FR3, with step-by-step matching networks minimizing losses.
- mmWave Scalability: GaN HEMT scaling laws for >60% efficiency, including trap mitigation via Soitec's epi engineering.
- MMIC Integration: Fully integrated PAs demonstrating real-world 6G waveforms, with linearity metrics (ACLR <-45 dBc).
These publications build on prior NTU work, such as Prof. Ng's invited talks on RF GaN-on-Si scaling for 5G/6G.NSTIC GaN Research Each paper provides datasets, simulations (using TCAD tools), and benchmarks against commercial devices, offering actionable insights for industry adoption.
GaN-on-Silicon: Revolutionizing Substrates for 6G
Traditional GaN-on-SiC excels in power but is expensive (wafers >$1000) and thermally mismatched for silicon integration. Soitec's GaN-on-Si uses ion-slicing to layer thin GaN (microns) on 200mm silicon, slashing costs by 70% while retaining 80% of SiC performance. Process: Plasma immersion ion implantation, Smart Cut™ splitting, wafer bonding—yielding defect densities <108/cm².
Benefits include:
- Seamless CMOS co-integration for AI-driven 6G chips.
- Lattice matching reduces cracking, boosting yield to >90%.
- Scalable to 300mm for mass production.
In Singapore's context, this aligns with the nation's <a href="/sg">semiconductor ecosystem</a>, where NTU's NSTIC GaN (launched 2025 with S$123M) provides 8-inch GaN-on-Si pilot lines.
NTU's Pivotal Role in Singapore's GaN Innovation Hub
NTU, ranked Asia's top young university, houses NSTIC GaN under Prof. Ng Geok Ing, a pioneer with 4000+ citations in GaN HEMTs. The center bridges academia-industry, offering foundry services from mid-2026. This collab exemplifies Singapore's RIE2025 plan (S$25B investment), aiming for 20% global GaN market share by 2030. <a href="/higher-education-news/singapore-randd-boom-sdollar37b-rie2030-boosts-uni-research-or-academicjobs-7581">Related Singapore R&D surge</a>.
Cultural context: As a city-state with no natural resources, Singapore invests heavily in high-tech, training 20,000 engineers annually via institutes like NTU. For aspiring researchers, explore <a href="/research-jobs">research positions</a> in GaN.
Singapore's National Push for 6G Supremacy
Beyond NTU, Singapore's 6G efforts include MediaTek-SUTD's S$34M lab and A*STAR's quantum initiatives. GaN fits the GlobalFoundries-NTU ecosystem, with projections of S$10B annual semis output by 2027. Challenges: Talent shortage—solved via scholarships; supply chain—mitigated by local fabs.
| Metric | GaN-on-Si (NTU-Soitec) | GaAs (Current 5G) | GaN-on-SiC |
|---|---|---|---|
| PAE @ FR3 | >50% | ~30% | ~55% |
| Cost/Wafer | $200 | $300 | $1000+ |
| Integration | CMOS-Compatible | Limited | Hybrid |
This table underscores GaN-on-Si's edge for 6G scale-up.
Implications for Global 6G Connectivity and Beyond
6G envisions holographic comms, AI-native networks, and IoT trillions. High-PAE GaN PAs cut energy use by 40%, vital as networks consume 10% global electricity. Stakeholder views: Telcos praise efficiency; handset makers (Qualcomm, Samsung) eye adoption; environmentalists note lower carbon footprint.
Real-world cases: Similar GaN in 5G boosted Ericsson base stations 25% efficiency. Future: THz PAs for 1Tbps links. Actionable: Industries can license NTU tech via NSTIC.NSTIC GaN Site
Expert Insights and Prof. Ng Geok Ing's Leadership
Prof. Ng, recipient of 2025 President's Technology Award, emphasizes: "GaN-on-Si democratizes high-power RF, fueling Singapore's 6G ambitions." His team at ERI@N/NTU pioneered mmWave GaN, with 300+ pubs. Multi-perspective: Industry (Soitec CTO: "Pushes RF limits"), academia (balanced vs overhype), policy (aligns NEP).
For careers, <a href="/higher-ed-career-advice/how-to-write-a-winning-academic-cv">craft a standout CV</a> for GaN roles.
Photo by Bing Hui Yau on Unsplash
Challenges, Solutions, and Future Roadmap
Challenges: Defect control in epi growth, thermal runaway at high freq. Solutions: Soitec's trap-reduced epi, NTU's advanced modeling. Timeline: Prototypes 2026, commercialization 2028-30. Outlook: GaN market to $10B by 2030, Singapore capturing 15% via hubs like NSTIC.
Risks: Supply volatility (Ga rare); mitigations: Recycling, alternatives. Case: EU's GaN push mirrors Singapore's.
Opportunities in Singapore's Thriving Higher Ed Semis Scene
NTU grads earn median S$6.5k starting; demand surges for GaN experts. Explore <a href="/higher-ed-jobs/research-jobs">research jobs</a>, <a href="/university-jobs">university positions</a>. AcademicJobs connects to NTU postings. Share insights on <a href="/rate-my-professor">Rate My Professor</a>.Official Press Release
