Rate My Professor Peter Gammon

Gammon's research focuses on Silicon Carbide (SiC) power electronic devices, encompassing device design using TCAD, fabrication processes such as oxide interfaces and epitaxial growth, reliability testing, and applications in electric vehicles, satellites, renewable energy systems, and electrical grids. He has directed several major UKRI and EU-funded initiatives, including the SiCSat Project (EP/V000543/1) developing radiation-hardened SiC devices for space missions and the Switch Optimisation Theme (EP/R00448X/1) within the EPSRC Centre for Power Electronics, which advanced ultra-high-voltage (10 kV+) SiC IGBT devices for grid applications. With over 100 publications, three patents, 1,608 citations, and an h-index of 23 on Google Scholar, his influential works include 'Modelling the inhomogeneous SiC Schottky interface' (Journal of Applied Physics, 2013), 'Effect of Mesa Sidewall Angle on 4H-Silicon Carbide Trench Filling Epitaxy using Trichlorosilane and Hydrogen Chloride' (Advanced Materials Interfaces, 2024), and 'Epitaxial trench refill of 4H-SiC by chlorinated chemistry' (Applied Physics Letters, 2024). Gammon teaches power device fundamentals in the third-year module ES3E0: Power Electronics, contributing to education in power electronics. His efforts bridge academia and industry, driving advancements in efficient, reliable SiC technologies for sustainable energy transitions.