Job Information
Organisation/Company: Institute of High Pressure Physics, Polish Academy of Sciences
Department: Molecular Beam Epitaxy NL-14
Research Field: Physics
Researcher Profile: Recognised Researcher (R2)
Positions: Postdoc Positions
Application Deadline: 29 Oct 2026 - 23:59 (Europe/Warsaw)
Country: Poland
Type of Contract: Temporary
Job Status: Part-time
Hours Per Week: 26
Offer Starting Date: 1 Nov 2026
Is the job funded through the EU Research Framework Programme? Not funded by a EU programme
Is the Job related to staff position within a Research Infrastructure? No
Offer Description
Assistant professor position is founded through Foundation for Polish Science project “Electrically driven compact room temperature single photon sources”, FENG.02.03-IP.05-0021/24
The project aims to develop a new type of single-photon source (SPS), operating at room temperature and electrically excited, with potential for both research and quantum telecommunications applications, in particular in quantum key transmission. Currently available commercial single-photon sources are mainly based on parametric conversion. Their limitations include the lack of “on-demand” emission capabilities, as well as relatively low efficiency and the need for external laser excitation, which prevents miniaturization and increases energy demand.
Project target is to develop hybrid SPS based on III-N/hBN materials electrically driven working at room temperature. The SPS consists of III-N microLEDs which is used as a pump for hBN. Integration of these two materials is a main challenge.
The device will emit single photons "on demand" and will enable efficient coupling with external optical systems. The breakthrough properties of this device will be provided by a hybrid structure in which a nitride laser or resonant diode is integrated with a photonic structure in which an hBN layer with quantum emitters is placed. Maximization of photon extraction will be achieved thanks to the Purcell effect, which in the optimal case will allow for indistinguishability of emitted photons.
Candidate should have PhD title from physics, material science or chemistry.
The candidate should have in-depth knowledge of GaN physics and technology, including the preparation of GaN substrates for epitaxial growth (mechanical and mechanochemical polishing, as well as "epi-ready" cleaning). The candidate will be responsible for analyzing the structural quality of the epitaxial growth processes using AFM, XRD, and defect-selective etching (DSE) techniques. Their duties will also include the quantitative analysis of strain within the fabricated structures, which incorporate Bragg reflectors. This is particularly crucial for achieving the LED operating parameters required to pump hBN layers.
We offer the part time job (65% of full employment – 26h/week) for 17 months with salary of 10 700/month (gross).
Candidates are asked to submit an application consisting of:
- Application or cover letter
- CV containing information on previous education, publications, participation in research projects, internships, scholarships, scientific achievements, awards, etc.
Please send applications or any questions electronically to Prof. Czeslaw Skierbiszewski at the following email address: czeslaw@unipress.waw.pl
Estimated date of interviews with selected candidates: October 29, 2026. Interviews may be held online.
Where to apply
E-mail: czeslaw@unipress.waw.pl
Requirements
Research Field: Physics — Education Level: PhD or equivalent
Research Field: Engineering » Materials engineering — Education Level: PhD or equivalent
Research Field: Chemistry — Education Level: PhD or equivalent
Skills/Qualifications: PhD in physics, material science, nanotechnology or similar, a good understanding of quantum mechanics, knowledge on semiconductor physics and characterization techniques, experience in epitaxy of nitrides by MBE and practical knowledge on AFM, SEM or other charaterization techinques will be an asset
Knowledge about physics of semiconductors including gallium nitride, quantum mechanics is essential. Experience in processing of nitride materials, optical and electrical characterization of nitride devices and quantum structures.
Specific Requirements: Experience in work in clean rooms. Basic knowledge about epitaxy of nitrides.
Languages: POLISH — Level: Good
Languages: ENGLISH — Level: Good
Research Field: Physics — Years of Research Experience: 1 - 4
Additional Information
Eligibility criteria
Candidate should have PhD title from physics, material science or chemistry:
Knowledge of nitride micro-LED processing will be required. Tasks for candidate will include preparation of GaN substrates for epitaxy, characterisation of surface, growth of nitride devices, characterization of the operating parameters of these devices (measurements of electroluminescence, quantum efficiency) and supervising selected processing elements of these diodes, such as the fabrication of dielectric mirrors and their optimization in order to obtain the required operating parameters of LEDs.
Selection process
Candidates are asked to submit an application consisting of:
- Application or cover letter
- CV containing information on previous education, publications, participation in research projects, internships, scholarships, scientific achievements, awards, etc.
Please send applications or any questions electronically to Prof. Czeslaw Skierbiszewski at the following email address: czeslaw@unipress.waw.pl
Estimated date of interviews with selected candidates: October 30, 2026. Interviews may be held online.
Decision will be made by 31th October 2026.
Website for additional job details: https://www.unipress.waw.pl/mbe/en
Work Location(s)
Number of offers available: 1
Company/Institute: Institute of High Pressure Physics PAS
Country: Poland
State/Province: mazowieckie
City: Warszawa
Postal Code: 01-424
Street: Prymasa Tysiąclecia 98
Contact
State/Province: mazowieckie
City: Warszawa
Website: http://unipress.waw.pl
Street: Sokołowska 29/37
Postal Code: 01-142
E-Mail: czeslaw@unipress.waw.pl
Phone: 228760351
