"CLAWS III-N Power Integration Engineer"

CLAWS III-N Power Integration Engineer

Company: North Carolina State University

Job Location:

Category: Electrical Engineering

Type: Full-Time

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Location: Raleigh, NC

Essential Job Duties:

We are seeking a highly skilled Wide-Bandgap Power Device Engineer to join our team and contribute to the development of next-generation power semiconductor devices. The ideal candidate will have expertise in semiconductor process integration, power device design (diodes, FETs, etc.), electrical characterization, and device simulation to drive innovation in high-efficiency, high-performance wide-bandgap power solutions.

Key Responsibilities

• Power Device Design & Development (30%)
  • Design and optimize GaN power devices (HEMTs, Diodes, lateral/vertical FETs) for high-voltage and high-frequency applications.
  • Utilize TCAD simulation (e.g., Synopsys, Silvaco, etc.) for process and device modeling, electrical characteristics prediction, and performance enhancement.
  • Develop and refine device layouts for wafer fabrication, ensuring manufacturability and reliability.
• Process Integration & Fabrication (30%)
  • Work to define and optimize GaN-on GaN, GaN-on-Si, GaN-on-SiC, and other heteroepitaxial structures for power applications.
  • Lead the wafer process flow development, including epi structures, etching, metallization, and passivation steps.
  • Troubleshoot process integration challenges related to defectivity, yield, and reliability.
• Electrical Characterization & Reliability Testing (20%)
  • Define and execute device characterization plans (IV, CV, breakdown, leakage, switching performance).
  • Analyze reliability metrics such as TDDB, HTRB, HTOL, and step-stress testing to assess long-term device stability.
  • Interface with packaging and application engineers to optimize thermal management and electrical performance in real-world applications.
• Cross-functional Collaboration (20%)
  • Work with process engineers and R&D partners to drive technology improvements.
  • Collaborate with circuit designers, applications engineers, and product development teams to translate device-level improvements into system-level advantages.
  • Stay up to date with emerging GaN technology trends, competitive landscape, and industry benchmarks.

Other Work/Responsibilities:

• The successful candidate will:
  • Comply with stated workplace policies.
  • Communicate results, plans, and other updates to a variety of audiences.
  • Adhere to and mentor others in known best practices.
  • Support CLAWS activities such as tours, meetings, and conferences.

Minimum Experience/Education:

• Ph.D. or M.S. in Electrical Engineering, Materials Science, or a related field with a focus on power semiconductor devices.
• 3+ years of experience in GaN power device design and process integration (industry or research).

Required Qualifications:

The successful candidate must demonstrate:

• A track record of publications in high-quality journals and/or conferences.
• Experience characterizing high-power semiconductor devices and extracting relevant device parameters.
• Excellent communication and interpersonal skills.
• Ability to multitask and meet deadlines with moderate supervision.
• Ability to follow safe procedures for working with semiconductor fabrication equipment, chemicals, and compressed gas cylinders.
• Comfort in collaborating with students, faculty, and staff of varying experience and backgrounds.
• Strong background in semiconductor physics, TCAD simulation, and electrical characterization.
• Hands-on experience with semiconductor process integration, fabrication, and failure analysis.
• Familiarity with GaN E-mode, D-mode, lateral vs. vertical device structures, and reliability challenges.
• Eligibility to obtain clearance upon request of the US government.

Preferred Qualifications:

The successful candidate would preferably have additional experience in:

• TCAD device modeling.
• Additional characterization of materials and devices, including failure analysis, defect inspection, radiation effects, and high-k dielectrics.
• Fabrication of semiconductor devices for high-power applications.
• Lithography mask layout.
• MES and SPC systems.
• Statistical methods (e.g., DOE, GR&R) and tools (e.g., JMP, Minitab)
• Power electronics applications (high-voltage converters, automotive, RF, or data centers).
• Packaging constraints and thermal management for GaN devices.

Required License or Certification:

• N/A

If you have general questions about the application process, you may contact Human Resources at (919) 515-2135 or workatncstate@ncsu.edu.

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