"CLAWS III-N RF Integration Engineer"

CLAWS III-N RF Integration Engineer

Company: North Carolina State University

Job Location: Raleigh, NC

Category: Other Engineering Faculty

Type: Full-Time

Essential Job Duties: We are seeking a highly skilled RF Integration Engineer to join our team and contribute to the development of next-generation RF semiconductor devices. The ideal candidate will have expertise in semiconductor process integration, device and amplifier design, electrical characterization, and device simulation.

Key Responsibilities

• RF Device Design and Development (30%): Design and optimize GaN RF devices including discrete HEMTs, passive elements, and MMICs. Establish a flexible PDK defining the CLAWS RF technologies. Utilize TCAD simulation (e.g., Synopsys, Silvaco, etc.) for process and device modeling, electrical characteristics prediction, and performance enhancement. Develop and refine device layouts for wafer fabrication, ensuring manufacturability and reliability.
• Process Integration and Fabrication (30%): Be responsible for process development and integration enabling the fabrication of GaN devices leveraging NCSU's nanofabrication facilities. Establish hands-on proficiency in relevant fabrication methods, including lithography, metal and dielectric deposition, etching, wafer dicing, and others as needed.
• Characterization and Reliability Testing (20%): Define and execute device on-wafer and packaged device characterization plans that include DC, small signal RF, load-pull tests. Utilize model extraction tools (e.g., IC-CAP) to generate compact models and from electrical test data. Leverage failure analysis and characterization methods to support process development and integration. Analyze reliability metrics to assess long-term device stability.
• Cross-Functional Collaboration (20%): Work with process engineers and R&D partners to drive technology improvements. Collaborate with circuit designers, applications engineers, and product development teams to translate device-level improvements into system-level advantages.

Other Work/Responsibilities: The successful candidate will: Comply with stated workplace policies. Communicate results, plans, and other updates to a variety of audiences. Adhere to and mentor others in known best practices. Support CLAWS activities such as tours, meetings, and conferences.

Minimum Experience/Education: Ph.D. in a relevant field with research focus on GaN device processing. OR Bachelor's degree in a relevant field with at least 5 years' experience in GaN device development. A track record of significant achievement is required.

Required Qualifications: The successful candidate must demonstrate: Advanced skill in developing and using EDA tools for RF device design. Proficiency developing or integrating processes supporting the fabrication of GaN RF devices. Experience and proficiency in one or more of the following fabrication areas: lithography, metal or dielectric film deposition, or etching. Excellent communication and interpersonal skills. Ability to multitask and meet deadlines with moderate supervision. Ability to follow safe procedures for working with semiconductor fabrication equipment, chemicals, and compressed gas cylinders. Comfort collaborating with students, faculty, and staff of varying experience and backgrounds.

Preferred Qualifications: The successful candidate would preferably have a Ph.D. in a relevant engineering field with research focusing on GaN device process development. The successful candidate would preferably have additional experience in: E-beam lithography. Device characterization. Impedance transforming fixture design. Failure analysis, lifetime estimation, and defect inspection. MES and SPC systems. Statistical methods (e.g., DOE, GR&R) and tools (e.g., JMP, Minitab).

Required License or Certification: N/A