Job Information
- Organisation/Company: Institut Jean Lamour
- Department: Department P2M
- Research Field: Physics » Electronics
- Research Field: Physics » Optics
- Research Field: Physics » Applied physics
- Researcher Profile: First Stage Researcher (R1)
- Positions: Postdoc Positions
- Application Deadline: 3 Jan 2027 - 23:59 (Europe/Paris)
- Country: France
- Type of Contract: Temporary
- Job Status: Full-time
- Hours Per Week: 35
- Offer Starting Date: 4 Jan 2027
- Is the job funded through the EU Research Framework Programme?: Not funded by a EU programme
- Is the Job related to staff position within a Research Infrastructure?: No
Offer Description
Solid-state detectors capable of directly sensing light helicity are essential components for polarization-encoded optical communication and circular-polarimetric imaging. Spin photodiodes (spin PDs) based on ferromagnet/tunnel-barrier/semiconductor heterostructures offer a promising approach for direct helicity detection. A spin PD can be regarded as the reverse operation of a spin-light emitting diode (spin-LED): circularly polarized light generates spin-polarized carriers in the semiconductor, which are electrically detected through spin-dependent tunneling.
Although major advances have been achieved in recent years by our group in the development of spin-LEDs, including circular polarization degrees of approximately 40% at room temperature and electrical switching of magnetization, and consequently of the polarization of light [1], relatively little research has focused on the development of spin photodiodes. We have recently demonstrated that a Ge-based spin photodiode can operate without an externally applied magnetic field at wavelengths relevant to optical telecommunications [2]. However, the spin-dependent photocurrent asymmetry still less than 1%. The goal of the post-doc is to develop spin-photodiode based on different semiconductors (GaAs, Ge) to enhance the polarization detection efficiency.
References:
- P. A. Dainone et al., “Controlling the helicity of light by electrical magnetization switching”, Nature 627, 783 (2024)
- A. Djeffal et al., "CoFeB/MgO/Ge spin photodiode operating at telecommunication wavelength with zero applied magnetic field”, Phys. Rev. Appl. 10, [contact details available in the full listing])
Where to apply
E-mail: [contact details available in the full listing]
Requirements
- Research Field: Physics » Electronics
- Education Level: PhD or equivalent
- Research Field: Physics » Condensed matter properties
- Education Level: PhD or equivalent
Skills/Qualifications
Since the post-doc will be in charge of spin-detector growth, device fabrication as well as the photocurrent characterization, knowledge of thin film growth, e-beam lithography process as well as transport measurement are necessary. A solid training in semiconductor and spintronics physics is also necessary. Creativity, rigor, and taste for teamwork are qualities that will be highly appreciated. Good communication skills (English or French) are also required.
- Languages: ENGLISH — Good
- Languages: FRENCH — Basic
- Research Field: Physics » Electronics
- Years of Research Experience: 1 - 4
Internal Application form(s) needed: Post-doc position-IJL-spin photodiode.pdf (English, 406.44 KB - PDF)
Work Location(s)
- Number of offers available: 1
- Company/Institute: Institut Jean Lamour
- Country: France
- City: Nancy
- Postal Code: 54011
Contact
- State/Province: Lorraine
- City: Nancy
- Website: https://ijl.univ-lorraine.fr/equipes/equipe-nanomateriaux-pour-loptoelectronique
- Street: Campus ARTEM, 2 Allée André Guinier,
- Postal Code: 54011
- E-Mail: [contact details available in the full listing]
