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"Post-Doctoral Research Associate (Fixed Term)"

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Post-Doctoral Research Associate (Fixed Term)

Postdoctoral

8 March 2026

Location

Cambridge

University of Cambridge

Type

Fixed Term (42 months)

Salary

£37,694-£46,049 (Research Associate); £34,610 (Research Assistant pre-PhD)

Teaching Load

Day-to-day supervision of Masters/PhD students

Required Qualifications

PhD in Materials Science, Physics, Electrical Engineering or related
Nitride crystal growth experience (MOVPE preferred)
Characterization techniques: XRD, SEM, TEM, SPM, CL, PL, Hall, C-V
Data presentation & student supervision skills

Research Areas

Gallium Nitride materials
Power electronics devices
HEMTs on 200mm silicon substrates
Sustainable substrate reuse
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Post-Doctoral Research Associate (Fixed Term)

Post-Doctoral Research Associate (Fixed Term)

A talented and creative postdoctoral researcher is sought to work in the Cambridge Centre for Gallium Nitride performing growth of nitride materials and devices for applications in power electronics and characterising the resulting materials. The Cambridge Centre for Gallium Nitride is part of the Department of Materials Science and Metallurgy at the University of Cambridge and also leads the nitride activity within the EPSRC National Epitaxy Facility.

This post is available under the Compound Semiconductor Manufacturing Hub for a Sustainable Future (funded by EPSRC) in collaboration with the University of Cardiff and other partners. In the context of the development of more sustainable and less resource intensive routes to the manufacturing of nitride semiconductor devices, the successful candidate will contribute to research on the growth of high electron mobility transistors (HEMTs) on 200 mm silicon substrates and also to the development of routes to the reuse of substrates in the nitride transistor supply chain. The role may also present the opportunity for basic device fabrication in order to facilitate epitaxy characterisation, and hence experience of device fabrication is desirable.

The successful applicant will have extensive experience of nitride crystal growth, preferably using metal-organic vapour phase epitaxy (MOVPE) and will also be well-versed in a range of techniques for the characterisation of the structure and properties of materials. The candidate will be expected to have extensive experience of two or more of the following techniques: scanning probe microscopy, x-ray diffraction, scanning electron microscopy, cathodoluminescence spectroscopy, photoluminescence spectroscopy, transmission electron microscopy, Hall probe measurements, or C-V measurements.

Overall responsibilities will include managing research activities, generating high quality data and developing scientific techniques. The successful candidates will be expected to contribute intellectually to the direction of the nitride research within the Centre. It is expected that they will present their data locally at lab meetings and seminars, and more widely at international scientific conferences. They will be expected to draft scientific manuscripts with support from Prof Oliver and to contribute to day-to-day supervision of Masters or PhD students. The successful applicants will hold a PhD (or be expected to complete their PhD within 3 months of starting the role) in Materials Science, Physics, Electrical Engineering or a related area. They will be able to demonstrate skills in data presentation, both verbally and in writing. They will be committed to collaborative and interdisciplinary research and be able to demonstrate the ability work both independently and as part of a team.

Applications are particularly welcome from women, black and minority ethnic candidates.

The salary range if appointed as a Research Associate is 37,694-46,049 GBP per annum, successful candidates appointed prior to their PhD completion as a Research Assistant will receive 34,610 GBP annum with promotion to Research Associate on attainment of PhD.

Fixed-term: The funds for this post are available for 42 months.

Click the 'Apply' button below to register an account with our recruitment system (if you have not already) and apply online. Documents in support of applications should include a CV and a research statement.

Should you have any queries, please reach out to Professor Rachel Oliver: rao28@cam.ac.uk, with a copy to: ajt69@cam.ac.uk and hrmsm@msm.cam.ac.uk

Please quote reference LJ48766 on your application and in any correspondence about this vacancy.

Key information

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Frequently Asked Questions

🎓What are the key qualifications for this <strong>Postdoctoral Research Associate</strong> role?

Candidates must hold a PhD in Materials Science, Physics, Electrical Engineering or related field (or complete within 3 months of start). Extensive experience in nitride crystal growth, preferably MOVPE, and proficiency in ≥2 characterization techniques like XRD, SEM, TEM, SPM, CL, PL, Hall or C-V measurements is required. See postdoc success tips and academic CV guide.

🔬What are the main responsibilities in this <strong>Gallium Nitride</strong> position?

Manage research on nitride growth for power electronics, develop HEMTs on 200mm silicon, explore substrate reuse for sustainability. Characterize materials, potentially fabricate devices, present at conferences, draft manuscripts, supervise students. Collaborate in postdoc research jobs at Cambridge Centre for Gallium Nitride.

💰What is the <strong>salary</strong> and contract duration?

Salary: £37,694-£46,049 for Research Associate (post-PhD); £34,610 for Research Assistant pre-PhD, with promotion upon completion. Fixed-term for 42 months under EPSRC-funded Compound Semiconductor Hub. Check UK academic salaries.

📝How to apply for this <strong>University of Cambridge postdoc</strong>?

Register on the recruitment system, submit CV and research statement. Quote reference LJ48766. Contact Prof. Rachel Oliver (rao28@cam.ac.uk). Applications close 8 March 2026. Review research assistant tips (adaptable to UK).

⚙️Is <strong>device fabrication</strong> experience required?

Desirable for epitaxy characterization via basic device fabrication, but core focus is MOVPE growth and materials characterization. Opportunity to contribute to sustainable HEMT manufacturing. Explore related research jobs.

🧪What research areas does this cover at Cambridge?

Focus on Cambridge Centre for Gallium Nitride: nitride semiconductors for power electronics, HEMTs on silicon, substrate recycling under EPSRC Hub. Intellectual input to nitride research direction. Women, Black, minority ethnic candidates encouraged.
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