Position Description

Texas State University is a doctoral-granting institution with high research activity, dedicated to advancing innovation and expanding the frontiers of research. Our Ultrawide Bandgap Semiconductor (UWBG) lab focuses on developing next-generation UWBG materials and process technologies based on diamond, III-nitrides, and Ga₂O₃ for high-power, high-frequency, and extreme-environment electronics.

Position Overview

Under the National Science Foundation and Department of Defense grants, we are seeking a highly motivated and talented Postdoctoral Research Fellow to join our UWBG Semiconductor Lab. The successful candidate will work on cutting-edge research projects focused on ultrawide bandgap materials (e.g., diamond, III-nitrides, and Ga₂O₃), advancing next-generation electronic devices through innovations in thin film epitaxy, doping, interface engineering, and laser-based processing.

Key Responsibilities

• Conduct research on ultrawide bandgap (UWBG) semiconductor materials (e.g., diamond, III-nitrides, Ga₂O₃), focusing on heteroepitaxial growth, doping, defect engineering, and thermal management.
• Investigate thermal transport, interface engineering, and heat dissipation strategies in high-power and high-frequency electronic devices through experimental and modeling approaches.
• Develop and optimize thin-film growth and processing techniques (e.g., CVD, PLD, sputtering, laser annealing) for next-generation semiconductor devices.
• Perform primarily experimental research, with a smaller component involving materials modeling and atomistic simulations to support and interpret experimental results.
• Collaborate with a multidisciplinary team spanning materials science, electrical engineering, and device physics.
• Publish research findings in high-impact journals and present at leading academic and industry conferences.
• Assist the PI in research proposal development for federal funding agencies and mentor graduate and undergraduate students.

This position is subject to the availability of funds.

Required Qualifications

• Ph.D. in Materials Science, Electrical Engineering, Physics, or a closely related field, completed within the last 2 years or expected within the next 3 months.
• Strong background in semiconductor materials growth physics and heterointerface engineering, particularly in UWBG materials.
• Knowledge of thin-film growth & characterization, semiconductor processing, and materials characterization techniques.
• Modeling, Programming and data analysis skills using tools such as COMSOL Multiphysics, MATLAB, Python, or similar.
• Hands-on experimental experience in laboratory settings.
• Demonstrated ability to work in a collaborative, multidisciplinary research environment with strong written and oral communication skills in English.
• Proven record of research productivity, evidenced by publications.