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Xi'an Jiaotong-Liverpool University

Ohmic Contact on dry etching interface of GaN p-FET

Closes:

Salary: CN¥99,000 per year

72

About the Project

The development of low-power computing sectors requires compact, power-efficient and high-performance integrated circuits. Hybrid technology that combines n-type metal oxide thin-film transistors and p-type organic thin-film transistors offers a potential solution. Dry etching is an indispensable fabrication step for GaN p-type field-effect transistors (p-FETs), yet etching-induced surface damage and interface defects severely degrade the performance of p-type ohmic contacts. This work…

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Xi'an Jiaotong-Liverpool University Jobs

Xi'an Jiaotong-Liverpool University

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Xi'an Jiaotong-Liverpool University (XJTLU) offers a dynamic work environment with a focus on international collaboration, research excellence, and career development opportunities.

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