Rate My Professor David Moran

Professor David Moran is Professor of Advanced Semiconductors (Electronic & Nanoscale Engineering) in the James Watt School of Engineering at the University of Glasgow, where he leads the Advanced Semiconductor Materials and Devices group. Previously, he led the Nano-Electronic Diamond Devices and Systems (NEDDS) group. His research specializations encompass wide bandgap and ultra-wide bandgap materials, including GaN, AlGaN, Ga2O3, cubic boron-nitride, and diamond. Additional academic interests include III-V materials and devices for cryogenic electronics, high temperature and radiation-hard electronic devices and systems, 2D dichalcogenide materials for electronic devices, high frequency (RF) and high power semiconductor devices, diamond micro and nano electrical mechanical systems (MEMS/NEMS), diamond-based radiation detectors, and colour centres and defects in diamond for quantum applications. Moran's expertise in nano-fabrication, device design and simulation, and material and device high frequency characterisation has driven advancements in diamond for electronics, mechanical, and sensing applications.

David Moran was awarded a Lord Kelvin Adam Smith Fellowship in 2012 following an EPSRC Advanced Research Fellowship, leading to a proleptic lectureship and his current professorial appointment. As a PhD student, he won awards at international conferences, complemented by high-impact publications during his postdoctoral career. His extensive publication record, exceeding 130 items, features key works such as 'Surface transfer doping of diamond: a review' (2021, Progress in Surface Science), 'RF operation of hydrogen-terminated diamond field effect transistors: a comparative study' (2015, IEEE Transactions on Electron Devices), 'Hydrogen-terminated diamond field-effect transistors with cutoff frequency of 53 GHz' (2012, IEEE Electron Device Letters), 'Processing of 50 nm gate-length hydrogen terminated diamond FETs for high frequency and high power applications' (2011, Microelectronic Engineering), 'Extreme enhancement-mode operation accumulation channel hydrogen-terminated diamond FETs' (2025, Advanced Electronic Materials), and 'Interplay of carrier density and mobility in Al-rich (Al,Ga)N-channel HEMTs' (2025, APL Electronic Devices). He contributes to teaching as lecturer and course coordinator of Acoustics and Audio Technology 4, convenor of the EEE staff-student committee, and School of Engineering coordinator for MEng personal projects. Moran's research has advanced diamond transistors, high-power electronics, and ultrawide bandgap semiconductors for demanding environments including space and quantum technologies.