Rate My Professor David Moran

David Moran was awarded a Lord Kelvin Adam Smith Fellowship in 2012 following an EPSRC Advanced Research Fellowship, leading to a proleptic lectureship and his current professorial appointment. As a PhD student, he won awards at international conferences, complemented by high-impact publications during his postdoctoral career. His extensive publication record, exceeding 130 items, features key works such as 'Surface transfer doping of diamond: a review' (2021, Progress in Surface Science), 'RF operation of hydrogen-terminated diamond field effect transistors: a comparative study' (2015, IEEE Transactions on Electron Devices), 'Hydrogen-terminated diamond field-effect transistors with cutoff frequency of 53 GHz' (2012, IEEE Electron Device Letters), 'Processing of 50 nm gate-length hydrogen terminated diamond FETs for high frequency and high power applications' (2011, Microelectronic Engineering), 'Extreme enhancement-mode operation accumulation channel hydrogen-terminated diamond FETs' (2025, Advanced Electronic Materials), and 'Interplay of carrier density and mobility in Al-rich (Al,Ga)N-channel HEMTs' (2025, APL Electronic Devices). He contributes to teaching as lecturer and course coordinator of Acoustics and Audio Technology 4, convenor of the EEE staff-student committee, and School of Engineering coordinator for MEng personal projects. Moran's research has advanced diamond transistors, high-power electronics, and ultrawide bandgap semiconductors for demanding environments including space and quantum technologies.