Rate My Professor Koji Sueoka

Sueoka's research centers on intrinsic point defects in silicon and germanium, utilizing density functional theory and first-principles calculations. Key areas include Czochralski silicon crystal growth, oxygen precipitation, defect control in semiconductors, interstitial oxygen, nitrogen-vacancy complexes, self-interstitial atoms, vacancy clusters, ANN interatomic potentials, and phase-field simulations. He has published extensively, with 139 major papers, including 'Computer Simulation of Concentration Distribution of Intrinsic Point Defect Valid for All Pulling Conditions in Large-Diameter Czochralski Si Crystal Growth' (ECS Journal of Solid State Science and Technology, 2019), 'Review—Properties of Intrinsic Point Defects in Si and Ge Assessed by Density Functional Theory' (2016), 'Density functional theory study on the impact of heavy doping on Si intrinsic point defect properties and implications for single crystal growth from a melt' (Journal of Applied Physics, 2013), and 'Computer simulation for morphology, size, and density of oxide precipitates in CZ silicon' (Journal of the Electrochemical Society, 2003). Sueoka serves as Secretary of the Chugoku-Shikoku Branch of the Applied Physics Society since June 2003 and Secretary of Japan Society for the Promotion of Science Committee 145 since 2003. His work advances semiconductor manufacturing through industry collaborations.