Postdoctoral Research Associate

Position Description

Texas State University is a doctoral-granting institution with high research activity, dedicated to advancing innovation and expanding the frontiers of research. Our Ultrawide Bandgap Semiconductor (UWBG) lab focuses on developing next-generation UWBG materials and process technologies based on diamond, III-nitrides, and Ga₂O₃ for high-power, high-frequency, and extreme-environment electronics. Our research integrates advanced thin-film growth, laser-based processing, doping strategies, and interface engineering to enable energy-efficient, radiation-hardened, and thermally robust electronic systems, with applications spanning power electronics, space systems, and national defense technologies.

Position Overview

Under the National Science Foundation and Department of Defense grants, we are seeking a highly motivated and talented Postdoctoral Research Fellow to join our UWBG Semiconductor Lab. The successful candidate will work on cutting-edge research projects focused on ultrawide bandgap materials (e.g., diamond, III-nitrides, and Ga₂O₃), advancing next-generation electronic devices through innovations in thin film epitaxy, doping, interface engineering, and laser-based processing to achieve superior performance, thermal management, and energy efficiency in high-power and high-frequency applications.

Key Responsibilities

• Conduct research on ultrawide bandgap (UWBG) semiconductor materials (e.g., diamond, III-nitrides, Ga₂O₃), focusing on heteroepitaxial growth, doping, defect engineering, and thermal management.
• Investigate thermal transport, interface engineering, and heat dissipation strategies in high-power and high-frequency electronic devices through experimental and modeling approaches.
• Develop and optimize thin-film growth and processing techniques (e.g., CVD, PLD, sputtering, laser annealing) for next-generation semiconductor devices.
• Perform primarily experimental research, with a smaller component involving materials modeling and atomistic simulations to support and interpret experimental results.
• Collaborate with a multidisciplinary team spanning materials science, electrical engineering, and device physics.
• Publish research findings in high-impact journals and present at leading academic and industry conferences.
• Assist the PI in research proposal development for federal funding agencies and mentor graduate and undergraduate students and support their research and professional development.

This position is subject to the availability of funds.

Required Qualifications

• Ph.D. in Materials Science, Electrical Engineering, Physics, or a closely related field, completed within the last 2 years or expected within the next 3 months.
• Strong background in semiconductor materials growth physics and heterointerface engineering, particularly in UWBG materials (e.g., diamond, III-nitrides, Ga₂O₃) or related areas.
• Knowledge of thin-film growth & characterization, semiconductor processing, and materials characterization techniques (e.g., CVD, PLD, MBE, laser processing, structural/electrical/optical/thermal characterization).
• Modeling, Programming and data analysis skills using tools such as COMSOL Multiphysics, MATLAB, Python, or similar scientific computing platforms.
• Hands-on experimental experience in laboratory settings, including instrumentation, materials processing/characterization, and lab safety components.
• Familiarity with materials modeling or atomistic simulation methods (e.g., molecular dynamics, DFT) is a plus.
• Demonstrated ability to work in a collaborative, multidisciplinary research environment with strong written and oral communication skills in English.
• Proven record of research productivity, evidenced by publications in reputable journals and conference proceedings.
• Strong problem-solving skills, self-motivation, and a commitment to high-quality research and career growth.

Preferred Qualifications

• Strong background in semiconductor device fabrication, thin-film growth, and materials characterization, particularly for ultrawide bandgap (UWBG) materials such as diamond, III-nitrides, and Ga₂O₃.
• Familiarity with materials modeling or atomistic simulations (e.g., molecular dynamics, DFT) to complement experimental work.
• Experience with laser-based processing, interface engineering, or thermal management in high-power electronic devices.
• Demonstrated ability to independently design and execute research projects, analyze results, and publish in high-impact journals.