Rate My Professor Maksym Myronov

Maksym Myronov is an Associate Professor and Leader of the Semiconductors Research Group in the Department of Physics at the University of Warwick. He holds a PhD and an MSc. Since 2008, he has established SiGe Reduced Pressure Chemical Vapour Deposition (RP-CVD) growth capabilities at Warwick, leading their development and expansion to include Si-Ge-C-Sn and SiC epitaxial growth. In 2014, he led the expansion of the department's cleanroom infrastructure to state-of-the-art ISO 3 to ISO 7 facilities. In 2015, he led the installation and commissioning of the UK's first Silicon Carbide (SiC) CVD system, enabling growth of 3C-, 4H-, and 6H-SiC polytypes. In 2019, he led the installation, commissioning, and establishment of research programmes for the Agile Microfabrication Facility. His research encompasses the science and technology of materials and solid-state devices for electronics, photonics, thermoelectrics, photovoltaics, spintronics, cryogenics, sensors, Micro Electro Mechanical Systems (MEMS), Nano Electro Mechanical Systems (NEMS), energy storage, and quantum technologies. This includes epitaxy of thin films and novel low-dimensional Group-IV semiconductors (Silicon, Germanium, Silicon Germanium, Silicon Carbon, Germanium Tin, Silicon Tin Germanium, 3C-SiC, 4H-SiC, 6H-SiC) using Molecular Beam Epitaxy (MBE), Atomic Layer Deposition (ALD), and Chemical Vapour Deposition (CVD), as well as 2D materials (Germanene, Stanene, Silicene, Graphene) and III-V semiconductors (InSb, InGaAs, GaN) integrated with Si on Sapphire and SOI substrates.

Myronov has authored over 400 papers, including around 200 articles in refereed international scientific journals and 4 book chapters, delivered over 200 talks at national and international conferences and workshops, and filed over 10 patents. Key publications include 'Holes Outperform Electrons in Group IV Semiconductor Materials' (2023), 'Electric field-tuneable crossing of hole Zeeman splitting and orbital g-tensors in a Ge quantum well' (2023), 'In–situ strain control in epitaxial silicon carbide compound semiconductors' (2024), and 'Ultra-High Hall Mobility Exceeding One Million in a Strained Germanium Quantum Well' (2012). The Semiconductors Research Group has achieved the highest recorded hole mobility in silicon-compatible materials, enhanced hole mobility in strained germanium for new quantum materials, and the first fractional quantization in 2D holes. He chaired the UK MBE 2015 conference and maintains collaborations with scientists, researchers, and engineers from the UK, Europe, USA, Asia, and Japan, fostering strong industrial and academic links.