In a landmark announcement timed with Mobile World Congress 2026, Nanyang Technological University (NTU) Singapore and global semiconductor leader Soitec have unveiled groundbreaking results from their four-year joint research program. This collaboration has produced three seminal technical papers showcasing exceptional performance in Gallium Nitride (GaN) devices fabricated on Soitec's advanced epitaxial wafers, paving the way for energy-efficient 6G connectivity. The NTU-Soitec SmartSiC breakthrough not only advances GaN-on-Silicon technology but also highlights how SmartSiC substrates complement these innovations for high-power applications, positioning Singapore's higher education institutions at the forefront of semiconductor research.

The research addresses critical challenges in 6G networks, such as higher power density, wider bandwidth, and superior energy efficiency. NTU researchers demonstrated record-level Power Added Efficiency (PAE) exceeding 50% at Frequency Range 3 (FR3) bands—typically 7-24 GHz—using low voltages ideal for battery-powered handsets. This achievement underscores the potential of GaN-on-Silicon to outperform traditional Gallium Arsenide (GaAs) solutions in output power, thermal management, and integration, enabling slimmer RF front-ends for smartphones and wearables.

Understanding SmartSiC Technology: A Game-Changer in Substrates

SmartSiC, Soitec's proprietary engineered substrate platform, represents a revolutionary approach to Silicon Carbide (SiC) production. Silicon Carbide (SiC), a wide-bandgap semiconductor material, offers superior electrical properties compared to traditional silicon, including higher breakdown voltage, thermal conductivity, and switching speeds—essential for power electronics in electric vehicles (EVs), renewable energy inverters, and industrial motors.

The Smart Cut™ process, Soitec's core innovation, involves precisely transferring an ultra-thin layer of monocrystalline SiC (the active device layer) onto a low-resistivity polycrystalline SiC handle wafer. Step-by-step: 1) A high-quality mono-SiC donor wafer is prepared; 2) Hydrogen ions are implanted to create a cleave plane; 3) The thin active layer is bonded to the handle via direct wafer bonding; 4) The donor wafer is cleaved and polished for reuse—up to 10 times or more. This reduces costs by 40-50%, boosts yield through defect-free active layers, and enhances sustainability by minimizing waste.

In Singapore, where the semiconductor sector contributes nearly 6% to GDP and employs over 35,000 skilled workers, such technologies align perfectly with national ambitions. NTU's involvement bridges academia and industry, fostering innovations that support Singapore's goal to capture a larger share of the $14 billion local semicon market by 2030.

The NTU-Soitec Partnership: From Lab to 6G Reality

Initiated four years ago, the NTU-Soitec program targeted next-gen RF components for 6G. Researchers from NTU's School of Electrical and Electronic Engineering, renowned for GaN High Electron Mobility Transistors (HEMTs), collaborated with Soitec's epitaxial experts in Belgium. Hanlin Xie, a key NTU researcher, has contributed prior works on GaN-on-Si HEMTs achieving 210 GHz cut-off frequencies, laying groundwork for this milestone.

The three papers detail GaN devices on Soitec EPI wafers excelling in FR3 and mmWave bands. One highlight: PAE over 60% in mmWave, far surpassing GaAs benchmarks. Christophe Maleville, Soitec's CTO, noted, "This research confirms GaN-on-Silicon's outstanding RF performance while meeting cost and scalability needs for future mobiles." For Singapore universities, this exemplifies how partnerships amplify research impact.

NTU's ecosystem, including the Centre for Micro- and Nano-Electronics (CMNE), drives such advancements. With over 60 labs and partnerships like NSTIC(GaN)—launched in 2025—NTU trains talents for Singapore's semicon surge, projected to add 1,000 jobs in 2026.

Technical Deep Dive: GaN-on-Silicon Meets SmartSiC

Gallium Nitride on Silicon (GaN-on-Si) leverages silicon's maturity—large wafers, low cost—with GaN's high electron mobility. Challenges like lattice mismatch and thermal expansion are mitigated via advanced buffers and Soitec's EPI wafers. The NTU team optimized HEMT structures for FR3, achieving low knee voltage and high gain.

• Record PAE >50% at FR3, enabling efficient handsets.
• High mmWave power for base stations.
• Integration potential reduces chip count by 30%.

SmartSiC complements by handling high-power duties in 6G infrastructure, where SiC MOSFETs excel in inverters and amplifiers. Together, they form a hybrid ecosystem: GaN-on-Si for RF, SmartSiC for power conversion.

This synergy could cut 6G system energy use by 20-30%, vital as networks scale to terabit speeds.

Photo by Markus Winkler on Unsplash

Implications for 6G and Beyond

6G, eyeing 2030 commercialization, demands sub-THz speeds, AI-native networks, and ultra-reliability. NTU-Soitec advances enable compact, efficient mmWave/FR3 modules, crucial for Singapore's smart nation vision. Globally, GaN market to hit $2B by 2028, with SiC at $4B.

In EVs, SmartSiC boosts range 40% via efficient inverters. Renewables benefit from robust converters. Singapore's A*STAR IME 200mm SiC line, using SmartSiC, accelerates commercialization.Learn more on Soitec's SmartSiC

Singapore's Higher Education Driving Semiconductor Innovation

NTU ranks top globally in materials science, with EEE school producing 1,000+ grads yearly. Collaborations with NUS, SUTD, and SUSS form a talent pipeline. Government invests $1B+ in RIE2025, spawning NSTIC(GaN) for wide-bandgap tech.

Statistics: Semicon exports 16.6% to US; market $10B+ in 2025, growing 6.9% CAGR. Unis host GlobalFoundries, Micron fabs nearby.

• NTU: GaN HEMTs, 210GHz fT.
• NUS: MSc Semiconductor Tech.
• SUTD: Green Electronics.

Career Opportunities in Singapore's Booming Sector

The NTU-Soitec breakthrough signals demand for experts. 1,000 jobs open in 2026: process engineers, RF designers, materials scientists. Salaries average S$80k entry, S$150k+ senior.Career advice for research roles

Programs like NTU PhD scholarships, ITE upskilling prepare candidates. Rate professors in semicon fields

Challenges and Future Outlook

Challenges: Scaling 200mm+ wafers, defect reduction. Solutions: NTU's AI-optimized epi growth.

Outlook: 6G trials 2028, SiC in 50% EVs by 2030. Singapore targets 20% global GaN share via NTU-led hubs.

Photo by Artyom Korshunov on Unsplash

Why This Matters for Higher Education

NTU's role exemplifies how Singapore colleges translate research to industry impact. Aspiring academics, explore postdoc opportunities, higher ed jobs, university jobs, career advice.