"PhD positions (3x) on RF/Microwave Gallium Nitride (GaN) MMIC design and test"

Job Summary

Gallium Nitride research covers the entire chain from device modelling and characterisation, MMIC design up to phased-array implementations. This is part of the POLARIS programme, focusing on medical, defence, and communication applications, performed in cooperation with the University of Twente and TNO.

Responsibilities

You will investigate the design of GaN HEMT MMICs in one of three positions: 1) Focus on interaction between microwave design and measurement methods, exploring technological capabilities of GaN; 2) Focus on new methods of integrating microwave components by mapping design techniques from other technologies onto GaN; or 3) Focus on novel methods for robust very high power amplifiers. You will work independently, interact with supervisors, and push the state-of-the-art in GaN design.

Qualifications and Requirements

You are a self-motivated and enthusiastic researcher with an MSc degree with excellent grades in Electrical Engineering, specialized in Analog, RF, or Microwaves. Affinity with device physics, IC design, or microwave theory/measurements is ideal. You must be among the technically smartest of your generation, fluent in English (IELTS 6.5+, TOEFL-iBT 90+, or Cambridge C1 Advanced certificate), and capable of improving the state-of-the-art.

What the Employer Offers

A four-year full-time PhD position at the University of Twente with a gross monthly salary from €3,059 to €3,881. Benefits include a holiday allowance of 8%, an end-of-year bonus of 8.3%, a solid pension scheme, minimum 232 leave hours per year (based on 38-hour week, with 96 extra for 40-hour week), free access to sports facilities, family-friendly policies with parental leave, and a training programme through the Twente Graduate School.