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"Postdoctoral Research Associate in Advanced Electrical Analysis and/or Device Fabrication of Wide and Ultrawide Bandgap Semiconductors"

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Postdoctoral Research Associate in Advanced Electrical Analysis and/or Device Fabrication of Wide and Ultrawide Bandgap Semiconductors

The role

Applications are invited for the role of Postdoctoral Researcher position at the Centre for Device Thermography and Reliability (CDTR), led by Professor Kuball. This role encompasses the advanced electrical characterization of wide and ultra-wide bandgap semiconductor materials and devices, including GaN, Ga2O3, SiC and diamond (key enabling materials for power and RF electronics) and/or semiconductor device fabrication. Examples of interest include graded AlGaN/GaN channel and AlScN device technologies for RF applications, and vertical GaN devices for power applications. You will have the opportunity to develop and study unique device structures, and to access the extensive electrical device testing suite available in Bristol, in addition to thermal and electric field analysis of devices, and simulation tools (Silvaco Victory/ATLAS, ANSYS). You will also have access to a state-of-the-art clean room and the opportunity to collaborate within our 35-member team as well as with our industrial partners spanning the semiconductor supply chain, giving you the opportunity to make a major impact on future semiconductor device technology.

The CDTR leads numerous UK and international strategic programmes on power and RF electronics, including the ESA programme S2CANT, the EPSRC programme ULTRAlGaN and the UKRI Innovation and Knowledge Centre REWIRE, focusing on GaN, Ga2O3, SiC and diamond power materials and devices, from their fundamental understanding and development, to the commercialization of device technology in part co-designed with industry, a strategic investment of the UK funding agency UKRI in excess of £18M. This position benefits from the Chair in Emerging Technologies awarded to Professor Kuball by the Royal Academy of Engineering (RAEng) and various US funded programmes.

What will you be doing?

You will conduct research to advance ultra-wide bandgap semiconductor device technology and understanding. Responsibilities include the electrical characterization of wide and ultra-wide bandgap materials and devices, processing of semiconductor devices in a clean room using advanced fabrication techniques, developing device simulation TCAD models to support device design, and analysing device failure, breakdown and reliability.

You will also contribute to managing our thermal characterization laboratory, advise junior group members and support short term industrial contract.

You should apply if

  • Postgraduate (PhD) experience in Physics, Materials Science or Engineering, or be working towards one, or equivalent professional qualification/experience.
  • Ideally with a good publication record.
  • Research experience required in advanced electrical characterization of wide and ultrawide bandgap materials and/or devices and/or semiconductor device processing (essential photolithography/laser writer or e-beam lithography experience).
  • A willingness to work together with, and co-supervise, PhD students is necessary.
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